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The researchers of the molecular electronics group revelead two distinct mechanisms for the formation of graphene nanogaps.
The newest results of the molecular electronics group was published in Nano Letters.
Electrical tuning of Rashba spin-orbit interaction is demonstrated in InAs nanowires. Results are published in PRB.
Trajectories of quantized conductance are set in the bulk and controlled by gate electrodes. Published in Nanoscale.
Reliable resistive switching is demonstrated in asymmetrically designed atomic-scale memories utilizing all-Ag electrodes.
Electrostatic confinement from disorder is achieved with the help of the Landau gap. Published in Nanoscale.
Not only the interference being constructive, we show phase coherent transport effects in an InAs nanowire Cooper pair splitter.
The role of Joule-heating is understood in a nanometer-scale resistive memory.